Silicon N-Channel MOSFET
MOSFETs Silicon N-Channel MOS
SSM6K202FE
1. Applications
• High-Speed Switching • Power Management Switches
2. Features
...
Description
MOSFETs Silicon N-Channel MOS
SSM6K202FE
1. Applications
High-Speed Switching Power Management Switches
2. Features
(1) 1.8-V drive (2) Low drain-source on-resistance
: RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V)
3. Packaging and Internal Circuit
ES6
SSM6K202FE
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain
©2021-2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2006-03
2022-02-03 Rev.1.0
SSM6K202FE
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
30
V
VGSS
±12
V
Drain current (DC)
(Note 1)
ID
2.3
A
Drain current (pulsed)
(Note 1), (Note 2)
IDP
4.6
Power dissipation Channel temperature Storage temperature
(Note 3)
PD
Tch
Tstg
500
mW
150
�
-55 to 150
�
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimate...
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