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SSM6K204FE Dataheets PDF



Part Number SSM6K204FE
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet SSM6K204FE DatasheetSSM6K204FE Datasheet (PDF)

SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.5V drive • Low ON-resistance: Ron = 307 mΩ (max) (@VGS = 1.5V) Ron = 214 mΩ (max) (@VGS = 1.8V) Ron = 164 mΩ (max) (@VGS = 2.5V) Ron = 126 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current .

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SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.5V drive • Low ON-resistance: Ron = 307 mΩ (max) (@VGS = 1.5V) Ron = 214 mΩ (max) (@VGS = 1.8V) Ron = 164 mΩ (max) (@VGS = 2.5V) Ron = 126 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 2.0 A 4.0 Drain power dissipation PD (Note 1) 500 mW Channel temperature Storage temperature Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) ES6 1, 2, 5, 6 : Drain 3 : Gate 4 : Source JEDEC ― JEITA ― TOSHIBA 2-2N1A Weight: 3 mg (typ.) Characteristic Drain–source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Switching time Turn-on time Turn-off time Drain–source forward voltage Note 2: Pulse test Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 ⎯ ⎯ V V (BR) DSX ID = 1 mA, VGS = – 10 V 12 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA IGSS VGS = ± 10 V, VDS = 0 V ⎯ ⎯ ±1 μA Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V ⏐Yfs⏐ VDS = 3 V, ID = 1.0 A (Note2) 2.6 5.2 ⎯ S ID = 1.0 A, VGS = 4.0 V (Note2) ⎯ 90 126 RDS (ON) ID = 1.0 A, VGS = 2.5 V ID = 0.5 A, VGS = 1.8 V (Note2) ⎯ (Note2) ⎯ 115 164 mΩ 150 214 ID = 0.3 A, VGS = 1.5 V (Note2) ⎯ 185 307 Ciss ⎯ 195 ⎯ Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 35 ⎯ pF Crss ⎯ 29 ⎯ Qg ⎯ 3.4 ⎯ Qgs VDS = 10 V, ID= 2.0 A, VGS = 4 V ⎯ 2.3 ⎯ nC Qgd ⎯ 1.1 ⎯ ton VDD = 10 V, ID = 0.5 A, toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 8.0 ⎯ ns ⎯ 9.0 ⎯ VDSF ID = − 2.0 A, VGS = 0 V (Note2) ⎯ – 0.85 – 1.2 V Start of commercial production 2007-10 1 2014-03-01 Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V IN 0 10 μs VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C RG OUT VDD (c) VOUT 2.5 V 0V VDD VDS (ON) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 KN SSM6K204FE 10% 90% 10% 90% tr tf ton toff 1 2 3 1 2 3 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 Drain current ID (A) ID – VDS 4 10 V 4.0 V 2.5 V Common Source Ta = 25 °C 1.8 V 3 2 1.5 V 1 VGS = 1.2 V 0 0 0.2 0.4 0.6 0.8 1 Drain–source voltage VDS (V) Drain current ID (A) SSM6K204FE ID – VGS 10 Common Source VDS = 3 V 1 0.1 0.01 0.001 Ta = 100 °C 25 °C − 25 °C 0.0001 0 1.0 2.0 Gate–source voltage VGS (V) Drain–source ON-resistance RDS (ON) (mΩ) RDS (ON) – VGS 500 ID =1.0A Common Source 400 Ta = 25°C 300 200 100 0 0 25 °C Ta = 100 °C − 25 °C 2 4 6 8 10 Gate–source voltage VGS (V) Drain–source ON-resistance RDS (ON) (mΩ) RDS (ON) – ID 500 Common Source Ta = 25°C 400 300 1.5 V 200 1.8 V 2.5 V 100 VGS = 4.0 V 0 0 1 2 3 4 Drain current ID (A) RDS (ON) – Ta 400 Common Source 300 0.3 A / 1.5 V 200 0.5 A / 1.8 V 1.0 A / 2.5 V 100 ID = 1.0 A / VGS = 4.0 V 0 −50 0 50 100 150 Ambient temperature Ta (°C) Gate threshold voltage Vth (V) Vth – Ta 1.0 Common Source VDS = 3V ID = 1 mA 0.5 0 −50 0 50 100 150.


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