Document
SSM6K204FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K204FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5V drive • Low ON-resistance:
Ron = 307 mΩ (max) (@VGS = 1.5V) Ron = 214 mΩ (max) (@VGS = 1.8V) Ron = 164 mΩ (max) (@VGS = 2.5V) Ron = 126 mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25˚C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
2.0 A
4.0
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature Storage temperature
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
ES6
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Turn-on time Turn-off time
Drain–source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS ID = 1 mA, VGS = 0 V
20
⎯
⎯
V
V (BR) DSX ID = 1 mA, VGS = – 10 V
12
⎯
⎯
V
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
1
μA
IGSS
VGS = ± 10 V, VDS = 0 V
⎯
⎯
±1
μA
Vth
VDS = 3 V, ID = 1 mA
0.35 ⎯
1.0
V
⏐Yfs⏐
VDS = 3 V, ID = 1.0 A
(Note2) 2.6
5.2
⎯
S
ID = 1.0 A, VGS = 4.0 V
(Note2) ⎯
90
126
RDS (ON)
ID = 1.0 A, VGS = 2.5 V ID = 0.5 A, VGS = 1.8 V
(Note2) ⎯ (Note2) ⎯
115 164 mΩ
150 214
ID = 0.3 A, VGS = 1.5 V
(Note2) ⎯
185 307
Ciss
⎯
195
⎯
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
35
⎯
pF
Crss
⎯
29
⎯
Qg
⎯
3.4
⎯
Qgs
VDS = 10 V, ID= 2.0 A, VGS = 4 V
⎯
2.3
⎯
nC
Qgd
⎯
1.1
⎯
ton
VDD = 10 V, ID = 0.5 A,
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
⎯
8.0
⎯
ns
⎯
9.0
⎯
VDSF
ID = − 2.0 A, VGS = 0 V
(Note2) ⎯ – 0.85 – 1.2 V
Start of commercial production
2007-10
1
2014-03-01
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V IN
0
10 μs
VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C
RG
OUT
VDD
(c) VOUT
2.5 V
0V VDD VDS (ON)
Marking
6
5
4
Equivalent Circuit (top view)
6
5
4
KN
SSM6K204FE
10%
90%
10%
90%
tr
tf
ton
toff
1
2
3
1
2
3
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
2
2014-03-01
Drain current ID (A)
ID – VDS
4
10 V
4.0 V 2.5 V Common Source
Ta = 25 °C
1.8 V 3
2
1.5 V
1 VGS = 1.2 V
0
0
0.2
0.4
0.6
0.8
1
Drain–source voltage VDS (V)
Drain current ID (A)
SSM6K204FE
ID – VGS
10 Common Source VDS = 3 V
1
0.1 0.01 0.001
Ta = 100 °C
25 °C
− 25 °C
0.0001 0
1.0
2.0
Gate–source voltage VGS (V)
Drain–source ON-resistance RDS (ON) (mΩ)
RDS (ON) – VGS
500
ID =1.0A
Common Source
400
Ta = 25°C
300
200 100
0 0
25 °C
Ta = 100 °C
− 25 °C
2
4
6
8
10
Gate–source voltage VGS (V)
Drain–source ON-resistance RDS (ON) (mΩ)
RDS (ON) – ID
500 Common Source Ta = 25°C
400
300
1.5 V 200
1.8 V
2.5 V 100
VGS = 4.0 V
0
0
1
2
3
4
Drain current ID (A)
RDS (ON) – Ta
400 Common Source
300 0.3 A / 1.5 V
200
0.5 A / 1.8 V
1.0 A / 2.5 V
100
ID = 1.0 A / VGS = 4.0 V
0
−50
0
50
100
150
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
Vth – Ta
1.0 Common Source VDS = 3V ID = 1 mA
0.5
0
−50
0
50
100
150.