SSM6L05FU

SSM6L05FU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on resistance Q1: Ron = 0.8 Ω (max) (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V) Low gate threshold voltage Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 ±12 400 800 Unit V V mA Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating −20 ±12 −200 −400 Unit V V mA JEDEC JEITA TOSHIBA ― ― 2-2J1C Weight: 6.8 mg (typ.) Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25°C) Characteristics Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol PD (Note 1) Tch Tstg Rating 300 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test r...