SSM6L16FE

SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(π-MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Small package Low on-resistance Q1: RDS(ON) = 4 Ω (max) (@VGS = 2.5 V) Q2: RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) Unit: mm Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit 20 V ±10 V 100 mA 200 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit -20 V ±10 V -100 mA -200 Absolute Maximum Ratings (Q1, Q2 Common) (Ta = 25°C) 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 JEDEC ― JEITA ― TOSHIBA 2-2N1D Weight: 3 mg (typ.) Characteristics Symbol Rating Unit Power dissipation Channel temperature Storage temperature range PD (Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Metho...