SSM6N35FE

SSM6N35FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FE ○ High-Speed Switching Applications ○ Analog Switch Applications 1.2-V drive N-ch 2-in-1 Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) 1.6±0.05 1.0±0.05 0.5 0.5 1.6±0.05 1.2±0.05 Unit: mm 1 6 2 5 3 4 0.2±0.05 0.12±0.05 0.55±0.05 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse VDSS VGSS ID IDP 20 V ±10 V 180 mA 360 ES6 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 JEDEC - Drain power dissipation PD(Note 1) 150 mW JEITA - Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2N1A Weight: 3.0 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total...