TK12J60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK12J60U
Switching Regulator Application...
TK12J60U
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (DTMOS II)
TK12J60U
Switching
Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
600
V
±30
V
12 A
24
144
W
69
mJ
8
A
14
mJ
150
°C
−55 to 150
°C
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2
4.5
1.0
2.0
20.0 ± 0.3
9.0
2.0
3.3 MAX.
20.5 ± 0.5
2.0 ± 0.3
1.0
＋0.3 －0.25
5.45 ± 0.2
5.45 ± 0.2
2.8 4.8 MAX.
1.8 MAX. ＋0.3
0.6 －0.1
123
1. Gate 2. Drain(heat sink) 3. Source
JEDEC
⎯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliabilit...
