TK13A65U

TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg 650 V ±30 V 13 A 26 40 W 86 mJ 13 A 4.0 mJ 150 °C −55 to 150 °C Ф3.2 ± 0.2 10 ± 0.3 A Unit: mm 2.7 ± 0.2 3.9 3.0 15.0 ± 0.3 2.6 ± 0.1 4.5 ± 0.2 2.8 MAX. 13 ± 0.5 1.14 ± 0.15 0.69 ± 0.15 Ф0.2 M A 2.54 2.54 123 0.64 ± 0.15 1: Gate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshib...