TK13H90A1 www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(MACHⅡ π-MOSIV)
TK13H90A1
Swich...
TK13H90A1 www.DataSheet4U.com
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type(MACHⅡ π-MOSIV)
TK13H90A1
Swiching
Regulator Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.78Ω (typ.) : |Yfs| = 11S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 720V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 13 39 150 491 13 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C
Pulse (Note 1)
1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC JEITA TOSHIBA ― ― 2-16K1A
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
Weight: 3.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data ...