MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK50P03M1
1. Applications
• Switching Voltage Regulators • Motor Drivers • Powe...
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK50P03M1
1. Applications
Switching Voltage
Regulators Motor Drivers Power Management Switches
2. Features
(1) High-speed switching (2) Low gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TK50P03M1
DPAK
1: Gate 2: Drain (heatsink) 3: Source
©2016-2019 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2009-02
2019-04-19 Rev.5.0
TK50P03M1
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
50
A
Drain current (pulsed)
(Note 1)
IDP
150
Power dissipation
(Tc = 25)
PD
47
W
Single-pulse avalanche energy
(Note 2)
EAS
65
mJ
Single-pulse avalanche current
IAS
50
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab...