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IRFH5007PBF Dataheets PDF



Part Number IRFH5007PBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFH5007PBF DatasheetIRFH5007PBF Datasheet (PDF)

PD -95958 www.DataSheet4U.com IRFH5007PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 75 5.9 65 1.2 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Features and Benefits Features Low RDSon (≤ 5.9mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout.

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PD -95958 www.DataSheet4U.com IRFH5007PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 75 5.9 65 1.2 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Features and Benefits Features Low RDSon (≤ 5.9mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enables Better Thermal Dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5007TRPBF IRFH5007TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 1000 Tape and Reel Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 75 ±20 17 13 100 88 400 3.6 250 0.029 -55 to + 150 Units V h A g g c W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes  through † are on page 8 www.irf.com 1 03/12/10 IRFH5007PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. 75 ––– ––– 2.0 ––– ––– ––– ––– ––– 100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.09 5.1 ––– -8.4 ––– ––– ––– ––– ––– 65 11 4.5 20 29.5 24.5 21 1.2 10 14 30 11 4290 510 210 www.DataSheet4U.com Conditions Max. Units ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 5.9 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 150µA ––– mV/°C VDS = 75V, VGS = 0V 20 µA 250 VDS = 75V, VGS = 0V, TJ = 125°C VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 15V, ID = 50.


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