HEXFET Power MOSFET
IRFH5010PbF
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical) RG (typical)
ID
(@Tc(Bottom) = 25°C)
100
9.0
67 1.2
h100
V mΩ n...
Description
IRFH5010PbF
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical) RG (typical)
ID
(@Tc(Bottom) = 25°C)
100
9.0
67 1.2
h100
V mΩ nC Ω A
Applications
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
Features and Benefits
Features
Low RDSon (< 9 mΩ) Low Thermal Resistance to PCB (<0.5°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits Lower Conduction Losses Increased Power Density Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier Increased Reliability
Orderable part number
IRFH5010TRPBF IRFH5010TR2PBF
Package Type
PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note EOL notice # 259
Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C
TJ TSTG
Parameter Drain-to-Source Voltage
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation gPower Dissipation gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 9.
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