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IRFH5010PBF

International Rectifier

HEXFET Power MOSFET

IRFH5010PbF VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 100 9.0 67 1.2 h100 V mΩ n...


International Rectifier

IRFH5010PBF

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Description
IRFH5010PbF VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 100 9.0 67 1.2 h100 V mΩ nC Ω A Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Features Low RDSon (< 9 mΩ) Low Thermal Resistance to PCB (<0.5°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification HEXFET® Power MOSFET PQFN 5X6 mm Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5010TRPBF IRFH5010TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current gPower Dissipation gPower Dissipation gLinear Derating Factor Operating Junction and Storage Temperature Range Notes  through † are on page 9. ...




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