IRFH5110PBF

PD -96294 www.DataSheet4U.com IRFH5110PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 100 12.4 48 1.5 63 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Features Benefits Low RDSon (< 12.4 mΩ) Low Thermal Resistance to PCB (< 1.1°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5110TRPBF IRFH5110TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 100 ± 20 11 9.0 63 40 252 3.6 114 0.029 -55 to + 150 Units V A g g c W W/°C °C Linear Der...