IRFH5206PBF

PD -97466 www.DataSheet4U.com IRFH5206PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 60 6.7 40 1.7 89 V m : Qg (typical) RG (typical) ID nC : A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Features and Benefits Features Low RDSon (≤ 7.0mΩ at Vgs=10V) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Easier Manufacturing Compatible with Existing Surface Mount Techniques Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Orderable part number IRFH5206TRPBF IRFH5206TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 60 ± 20 16 13 89 56 350 3.6 100 0.83 -55 to + 150 ...