RF1001T2

www.DataSheet4U.com Fast recovery diodes RF1001T2D  Applications General rectification  Dimensions (Unit : mm) 4.5±0.3 　　　 0.1  Structure 1.2 1.3 5.0±0.2  Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3) 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 13.5MIN 8.0 ①  Construction Silicon epitaxial planar 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date  Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) Junction temperature Storage temoerature Symbol VRM VR Io IFSM Limits 200 200 10 80 150 -55 to +150 Unit V V A A Tj Tstg (*1)Business frequencies, Rating of R-load, Tc=126 C. 1/2 Io per diode  Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance C C Symbol VF IR Min. - Typ. 0.87 0.01 15 - Max. 0.93 10 30 2.5 Unit V μA ns  C/W IF=5A VR=200V Conditions trr  j-c IF=0.5A,IR=1A,Irr=0.25*IR JUNCTION TO CASE www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.D RF1001T2D Electrical characteristics curves 　 www.DataSheet4U.com Data Sheet 10 Ta=150 C 1 Ta=125 C 0.1 Ta=75 C Ta=-25 C Ta=25 C 10000 Ta=150 C Ta=125 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MHz 1000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=75...