RF2001NS3D

Super Fast Recovery Diode RF2001NS3D Series Standard Fast Recovery Dimensions (Unit : mm) Applications General rectification RF2001 NS3D ① Data Sheet Land size figure (Unit : mm) Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common dual type Construction Silicon epitaxial planer Structure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day Taping dimensions (Unit : mm) ①②③ Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave resistive load , Tc=90°C 1/2 Io per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Limits 350 300 20 100 150 55 to 150 Unit V V A A C C Electrical characteristics (Tj=25C, per diode) Parameter Symbol Conditions Forward voltage Reverse current Reverse recovery time VF IF=10A IR VR=300V trr IF=0.5A,IR=1A,Irr=0.25×IR Thermal resistance Rth(j-c) junction to case Min. － － － － Typ. Max. 1.2 1.3 0.03 10 17 25 －2 Unit V μA ns °C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A RF2001NS3D 　 Data Sheet FORWARD CURRENT:IF(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 Tj=125°C Tj=150°C 1 Tj=25°C Tj=75°C 0.1 0 per diode 500 1000 1500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 2000 1000...