DatasheetsPDF.com

RF505B6S

Rohm

Super Fast Recovery Diode

www.DataSheet4U.com Super Fast Recovery Diode RF505B6S  Series Standard Fast Recovery  Dimensions(Unit : mm)  Land s...


Rohm

RF505B6S

File Download Download RF505B6S Datasheet


Description
www.DataSheet4U.com Super Fast Recovery Diode RF505B6S  Series Standard Fast Recovery  Dimensions(Unit : mm)  Land size figure (Unit : mm) 6.0  Applications General rectification (2) 1.6 1.6 (3) 2.3 2.3  Features 1)Power mold type.(CPD) 2)High switching speed 3)Low Reverse current (1) CPD  Structure  Construction Silicon epitaxial planar Production month (1)  Taping dimensions(Unit : mm) 3.0 2.0 6.0 (2) (3)  Absolute maximum ratings(Tc=25 C) Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave,resistive load Tc=42 C Limits 600 600 5 50 150 -55to+150 Unit V V A A C C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25  C  Electrical characteristics(Tj=25 C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-l) Conditions IF=5.0A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to lead Min. - Typ. 1.3 0.05 22 - Max. 1.7 10 30 12 Unit V μA ns  C/W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A RF505B6S   www.DataSheet4U.com Data Sheet Electrical characteristic curves 100 Tj=125 C 10 Tj=150 C 100000 Tj=150 C 1000 f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 600 10000 Tj=75 C Tj=125 C 100 1000 1 Tj...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)