RF601T2D

www.DataSheet4U.com Fast recovery diode RF601T2D Applications General rectification Dimensions (Unit : mm)  Structure 4.5±0.3 　　　 0.1 Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3) ① 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2 Construction Silicon epitaxial planar 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 6 Io Forward current surge peak (60Hz/1cyc) 60 IFSM Junction temperature 150 Tj Storage temoerature -55 to +150 Tstg (*1)Business frequency, Rating of R-load, Tc=132CMAX. 1/2 Io per diode Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - Typ. 0.87 0.01 18 Max. 0.93 10 25 Unit V μA ns Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR trr www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.C RF601T2D Electrical characteristics curves 　 www.DataSheet4U.com Data Sheet 10 Ta=150 C 10000 Ta=150 C 100 Ta=125 C f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) Ta=125 C Ta=75 C 0.1 100 Ta=75 C Ta=25 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 1000 10 Ta=25 C 10 0.01 Ta=-25 C 1 Ta=-25 C 0.001 ...