RSX1001T3

www.DataSheet4U.com Schottky barrier diode RSX1001T3 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 10 150 150 -40 to +150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR jc Min. - Typ. - Max. 0.45 500 2.5 Unit V A C/W Conditions IF=5A VR=30 junction to case www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.B RSX1001T3 Electrical characteristic curves 10 Ta=150℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 1 Ta=25℃ Ta=75℃ Ta=-25℃ 100000 10000 1000 1000000 　 www.DataSheet4U.com Data Sheet Ta=150℃ Ta=125℃ Ta=75℃ 10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 1000 Ta=25℃ 100 10 1 Ta=-25℃ 0.1 100 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 10 0 5 10 15 20 25 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 420 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR...