SSM3J317T

SSM3J317T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8-V drive Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V) : Ron = 107 mΩ (max) (@VGS = -4.5 V) 2.9±0.2 0.95 １ ２ ３ Unit: mm +0.2 2.8-0.3 +0.2 1.6-0.1 0.4±0.1 0.15 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse ID Symbol VDSS VGSS (Note 1) IDP (Note 1) PD (Note 2) t = 5s Tch Tstg Rating -20 ±8 -3.6 -7.2 700 1400 150 −55 to 150 Unit V V 1.9±0.2 0.95 mW °C °C 0.7±0.05 A 1: Gate 2: Source Note: Using continuously under heavy loads (e.g. the application of TSM 3: Drain high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ― operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA ― Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling TOSHIBA 2-3S1A Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 10 mg (typ.) etc). Note 1: The junction temperature should not exceed 150°C during use. Note 2:...