Document
2SC2898
Silicon NPN Triple Diffused
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Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg
1
Ratings 500 400 7 8 16 4 50 150 –55 to +150
Unit V V V A A A W °C °C
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Electrical Characteristics (Ta = 25°C)
Item Collector to emitter sustain voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ — — Max — — Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 mH I C = 8 A, IB1 = 1.6 A, I B2 = –0.8 A, VBE = –5 V, L = 180 µH, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 4 A*1 VCE = 5 V, IC = 8 A*1 V V µs µs µs I C = 8 A, IB1 = –IB2 = 1.6 A, VCC ≅ 150 V I C = 4 A, IB = 0.8 A*1
V(BR)EBO I CBO I CEO
7 — — 15 7 — — — — —
— — — — — — — — — —
— 50 50 — — 1.0 1.5 0.8 2.0 0.8
V µA µA
DC current transfer ratio
hFE1 hFE2
Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test
VCE(sat) VBE(sat) t on t stg tf
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 100 IC(peak) Collector current IC (A)
Area of Safe Operation
µs 25 µs ) °C 50 µs 0 s 25 s = 25 m m 1 (T C 10 ion at
10
IC(max)(Continuous)
40
PW
DC
=
1.0
Op
er
20
0.1 Ta = 25°C, 1 Shot
0.01 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V)
2
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Collector Current Derating Rate 100 Collector current derating rate (%) Thermal resistence θj-c (°C/W) 10 3 1.0 0.3 0.1 0.03 0.01 0.01 0.01
Transient Thermal Resistance
80
IS
/B
Lim
60
it A
re
10 ms–
10 s
a
40
1
s– 0µ
10
ms
20
TC = 25°C 0.1 0.1 1.0 1.0 10 (s) 10 (ms)
0
50 100 Case temperature TC (°C)
150
Reverse Bias Area of Safe Operation 20 Collector to emitter voltage V(BR)CER (V) 600
Collector to Emitter Voltage vs. Base to Emitter Resistance IC = 1 mA
Collector current IC (A)
16
300 V, 16 A
500
12 400 V, 8A 450 V, 1.5 A
8
400
4
IB2 = –0.8 A
0
200 500 100 300 400 Collector to emitter voltage VCE (V)
300 100 1k 10 k 100 k 1M Base to emitter resistance RBE (Ω)
3
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Typical Output Characteristics 5 5
6 0. 0.5 0.4 0.3
Typical Transfer Characteristics TC = 25°C VCE = 5 V
Collector current IC (A)
0.2 3 0.1 2 0.05 A TC = 25°C IB = 0 0 1 3 4 2 5 Collector to emitter voltage VCE (V)
Collector current IC (A)
4
4
3
2
1
1
0
0.4 1.2 1.6 0.8 2.0 Base to emitter voltage VBE (V)
Collector to emitter saturation voltage VCE(sat) (V)
DC Current Transfer Ratio vs. Collector Current 100 DC current transfer ratio hFE
75°C 25°C
TC = –25° C
Collector to Emitter Saturation Voltage vs. Base Current 10 3 1.0 0.3 0.1 0.03 TC = 25°C 0.01 0.01 0.03 0.1 0.3 1.0 3 Base current IB (A) 10 IC = 1 A 2A 5A
30
10
3 VCE = 5 V 1 0.01 0.03 0.1 0.3 3 1.0 Collector current IC (A) 10
4
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Base to emitter saturation voltage VBE(sat) (V)
Base to Emitter Saturation Voltage vs. Collector Current 10 3 1.0 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) TC = 25°C IC = 5 IB Switching time t (µs) 10 3 1.0 0.3 0.1 0.03
Switching Time vs. Collector Current
tstg
tf ton
IC = 5 IB1 = –5 IB2 . VCC = . 150 V 10
10
0.01 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A)
Switching Time vs. Case Temperature 5 3 Switching time t (µs) tstg 1.0 tf 0.3 ton IC = 8 A IB1 = IB2 = 1.6 A RL = 19 Ω . VCC = . 150 V 0 25 75 100 50 Case temperature TC (°C) 125
0.1 0.05
5
Unit: mm
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11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08
+0.1
4.44 ± 0.2 1.26 ± 0.15
6.4
+0.2 –0.1
18.5 ± 0.5
15.0 ± 0.3
1.27
2.7 MAX 14.0 ± 0.5 1.5 MAX
7.8 ± 0.5
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.5 ± 0.1
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-220AB Conforms Conforms 1.8 g
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Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and re.