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C2898 Dataheets PDF



Part Number C2898
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2sC2898
Datasheet C2898 DatasheetC2898 Datasheet (PDF)

2SC2898 Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage, high speed and high power switching Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB .

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2SC2898 Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage, high speed and high power switching Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg 1 Ratings 500 400 7 8 16 4 50 150 –55 to +150 Unit V V V A A A W °C °C 2SC2898 www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ — — Max — — Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 mH I C = 8 A, IB1 = 1.6 A, I B2 = –0.8 A, VBE = –5 V, L = 180 µH, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 4 A*1 VCE = 5 V, IC = 8 A*1 V V µs µs µs I C = 8 A, IB1 = –IB2 = 1.6 A, VCC ≅ 150 V I C = 4 A, IB = 0.8 A*1 V(BR)EBO I CBO I CEO 7 — — 15 7 — — — — — — — — — — — — — — — — 50 50 — — 1.0 1.5 0.8 2.0 0.8 V µA µA DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test VCE(sat) VBE(sat) t on t stg tf Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 100 IC(peak) Collector current IC (A) Area of Safe Operation µs 25 µs ) °C 50 µs 0 s 25 s = 25 m m 1 (T C 10 ion at 10 IC(max)(Continuous) 40 PW DC = 1.0 Op er 20 0.1 Ta = 25°C, 1 Shot 0.01 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V) 2 2SC2898 www.DataSheet4U.com Collector Current Derating Rate 100 Collector current derating rate (%) Thermal resistence θj-c (°C/W) 10 3 1.0 0.3 0.1 0.03 0.01 0.01 0.01 Transient Thermal Resistance 80 IS /B Lim 60 it A re 10 ms– 10 s a 40 1 s– 0µ 10 ms 20 TC = 25°C 0.1 0.1 1.0 1.0 10 (s) 10 (ms) 0 50 100 Case temperature TC (°C) 150 Reverse Bias Area of Safe Operation 20 Collector to emitter voltage V(BR)CER (V) 600 Collector to Emitter Voltage vs. Base to Emitter Resistance IC = 1 mA Collector current IC (A) 16 300 V, 16 A 500 12 400 V, 8A 450 V, 1.5 A 8 400 4 IB2 = –0.8 A 0 200 500 100 300 400 Collector to emitter voltage VCE (V) 300 100 1k 10 k 100 k 1M Base to emitter resistance RBE (Ω) 3 2SC2898 www.DataSheet4U.com Typical Output Characteristics 5 5 6 0. 0.5 0.4 0.3 Typical Transfer Characteristics TC = 25°C VCE = 5 V Collector current IC (A) 0.2 3 0.1 2 0.05 A TC = 25°C IB = 0 0 1 3 4 2 5 Collector to emitter voltage VCE (V) Collector current IC (A) 4 4 3 2 1 1 0 0.4 1.2 1.6 0.8 2.0 Base to emitter voltage VBE (V) Collector to emitter saturation voltage VCE(sat) (V) DC Current Transfer Ratio vs. Collector Current 100 DC current transfer ratio hFE 75°C 25°C TC = –25° C Collector to Emitter Saturation Voltage vs. Base Current 10 3 1.0 0.3 0.1 0.03 TC = 25°C 0.01 0.01 0.03 0.1 0.3 1.0 3 Base current IB (A) 10 IC = 1 A 2A 5A 30 10 3 VCE = 5 V 1 0.01 0.03 0.1 0.3 3 1.0 Collector current IC (A) 10 4 2SC2898 www.DataSheet4U.com Base to emitter saturation voltage VBE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 10 3 1.0 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) TC = 25°C IC = 5 IB Switching time t (µs) 10 3 1.0 0.3 0.1 0.03 Switching Time vs. Collector Current tstg tf ton IC = 5 IB1 = –5 IB2 . VCC = . 150 V 10 10 0.01 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) Switching Time vs. Case Temperature 5 3 Switching time t (µs) tstg 1.0 tf 0.3 ton IC = 8 A IB1 = IB2 = 1.6 A RL = 19 Ω . VCC = . 150 V 0 25 75 100 50 Case temperature TC (°C) 125 0.1 0.05 5 Unit: mm www.DataSheet4U.com 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g www.DataSheet4U.com Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and re.


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