Preliminary www.DataSheet4U.com Datasheet
RJK0208DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G...
Preliminary www.DataSheet4U.com Datasheet
RJK0208DPA
Silicon N Channel Power MOS FET with
Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00
Apr 27, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2))
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 25 ±20 65 260 65 29 105 60 2.08 150 –55 to +150 Unit V V A A A A mJ W C/W C C
REJ03G1924-0200 Rev.2.00 Apr 27, 2010
Page 1 of 6
RJK0208DPA
Preliminary
www.DataSheet4U.com
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total g...