Preliminary www.DataSheet4U.com Datasheet
RJK03E9DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free REJ03G1933-0210 Rev.2.10 May 20, 2010
Outline
RENESAS Package code: P...
