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RJK03F6DNS Dataheets PDF



Part Number RJK03F6DNS
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel Power MOS FET
Datasheet RJK03F6DNS DatasheetRJK03F6DNS Datasheet (PDF)

www.DataSheet4U.com Datasheet RJK03F6DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V)  Pb-free  Halogen-free      REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Rating.

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www.DataSheet4U.com Datasheet RJK03F6DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V)  Pb-free  Halogen-free      REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±12 30 120 30 15 22.5 20 6.25 150 –55 to +150 Unit V V A A A A mJ W C/W C C REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Page 1 of 6 RJK03F6DNS www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 4.5 5.1 70 3000 310 200 0.65 22.0 6.2 8.6 16.7 9.3 49.6 9.2 0.87 26 Max — ± 0.1 1 2.5 5.4 6.4 — 4200 — — 1.85 — — — — — — — 1.13 — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 8 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 30 A VGS = 8 V, ID = 15 A VDD  10 V RL = 0.67  Rg = 4.7  IF = 30 A, VGS = 0 Note4 IF =30 A, VGS = 0 diF/ dt = 100 A/ s REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Page 2 of 6 RJK03F6DNS www.DataSheet4U.com Main Characteristics Power vs. Temperature Derating 40 1000 Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 30 100 1 10 PW = 10 ms 1 10 m s 10 0 μs μs 20 10 Operation in this area is limited by RDS(on) Tc = 25 °C DC Op er at ion 0 50 100 150 200 0.1 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 4.5 V 8V 3.0 V 50 Typical Transfer Characteristics VDS = 5 V Pulse Test Pulse Test Drain Current ID (A) 2.8 V .


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