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Datasheet
RJK03F6DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V) Pb-free Halogen-free REJ03G1916-0100 Rev.1.00 Apr 21, 2010
Outline
RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8)
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±12 30 120 30 15 22.5 20 6.25 150 –55 to +150 Unit V V A A A A mJ W C/W C C
REJ03G1916-0100 Rev.1.00 Apr 21, 2010
Page 1 of 6
RJK03F6DNS
www.DataSheet4U.com
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 4.5 5.1 70 3000 310 200 0.65 22.0 6.2 8.6 16.7 9.3 49.6 9.2 0.87 26 Max — ± 0.1 1 2.5 5.4 6.4 — 4200 — — 1.85 — — — — — — — 1.13 — Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 8 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 30 A VGS = 8 V, ID = 15 A VDD 10 V RL = 0.67 Rg = 4.7 IF = 30 A, VGS = 0 Note4 IF =30 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1916-0100 Rev.1.00 Apr 21, 2010
Page 2 of 6
RJK03F6DNS
www.DataSheet4U.com
Main Characteristics
Power vs. Temperature Derating
40 1000
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
30
100
1
10 PW = 10 ms 1
10 m s
10 0 μs
μs
20
10
Operation in this area is limited by RDS(on) Tc = 25 °C
DC Op er at ion
0
50
100
150
200
0.1 1 shot Pulse 0.1 1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 4.5 V 8V 3.0 V 50
Typical Transfer Characteristics
VDS = 5 V Pulse Test
Pulse Test
Drain Current ID (A)
2.8 V .