RJK5003DPD

www.DataSheet4U.com RJK5003DPD Silicon N Channel Power MOS FET High Speed Power Switching Use REJ03G0580-0200 Rev.2.00 Mar 14, 2006 Features VDSS : 500 V RDS(on) : 1.5 Ω (MAX.) ID : 5 A Surface mount package (MP-3A) Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 3 Applications Lighting ballast, SMPS, etc. Maximum Ratings (Tc = 25°C) Parameter Drain to source voltage Gate to source voltage Drain current Drain Peak current Avalanche current Channel dissipation Channel temperature Storage temperature Channel to case thermal impedance Note: Symbol VDSS VGSS ID ID (pulse)Note1 IAP Pch Tch Tstg θch-c Ratings 500 ±30 5 20 5 62.5 150 –55 to +150 2.0 Unit V V A A A W °C °C °C/W Channel to case Conditions VGS = 0 V VDS = 0 V L = 200 µH 1. Pulse width limited by safe operating area. Rev.2.00, Mar 14, 2006, page 1 of 6 RJK5003DPD www.DataSheet4U.com Electrical Characteristics (Tch = 25°C) Parameter Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Note: 2. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF Min. 500 — — 3.0 — — — — — — — — — Typ. — — — 3.5 1.3 550 60 10 20 20 60 25 1.0...