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RJK5013DPE Dataheets PDF



Part Number RJK5013DPE
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel Power MOS FET
Datasheet RJK5013DPE DatasheetRJK5013DPE Datasheet (PDF)

www.DataSheet4U.com RJK5013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1488-0200 Rev.2.00 Nov 29, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain di.

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www.DataSheet4U.com RJK5013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1488-0200 Rev.2.00 Nov 29, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 500 ±30 14 42 14 42 4 0.88 100 1.25 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.2.00 Nov 29, 2006 page 1 of 3 RJK5013DPE www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 500 — — 3.0 — — — — — — — — — — — — — Typ — — — — 0.385 1450 155 19 34 24 86 16 38 8 17 0.9 310 Max — 1 ±0.1 4.5 0.465 — — — — — — — — — — 1.5 — Unit V µA µA V Ω pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 7 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 7 A VGS = 10 V RL = 35.7 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 14 A IF = 14 A, VGS = 0 Note4 IF = 14 A, VGS = 0 diF/dt = 100 A/µs Rev.2.00 Nov 29, 2006 page 2 of 3 RJK5013DPE www.DataSheet4U.com Package Dimensions Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm 4.44 ± 0.2 10.2 ± 0.3 (1.4) 8.6 ± 0.3 + 0.3 – 0.5 10.0 (1.5) (1.5) 2.49 ± 0.2 0.2 0.1 + – 0.1 7.8 7.0 2.2 1.37 ± 0.2 1.3 ± 0.2 2.54 ± 0.5 0.3 3.0 + – 0.5 0.2 0.86 + – 0.1 0.4 ± 0.1 2.54 ± 0.5 Ordering Information Part Name RJK5013DPE-00-J3 Quantity 1000 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Nov 29, 2006 page 3 of 3 1.7 1.3 ± 0.15 7.8 6.6 www.DataSheet4U.com Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided f.


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