RJK5012DPE

Preliminary www.DataSheet4U.com Datasheet RJK5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch ch-c Tch Tstg Note2 Ratings 500 30 12 24 12 24 4 0.88 100 1.25 150 –55 to +150 Unit V V A A A A A mJ W C/W C C REJ03G1487-0300 Rev.3.00 May 12, 2010 Page 1 of 6 RJK5012DPE Preliminary www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge...