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RJK6002DPD Dataheets PDF



Part Number RJK6002DPD
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet RJK6002DPD DatasheetRJK6002DPD Datasheet (PDF)

www.DataSheet4U.com RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode re.

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www.DataSheet4U.com RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 600 ±30 2 4 2 4 1 0.05 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.1.00 Nov 09, 2006 page 1 of 3 RJK6002DPD www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 3.0 — — — — — — — — — — — — — Typ — — — — 5.7 165 20 2.5 28 17 47 20 6.2 1.1 3.6 0.87 260 Max — 1 ±0.1 4.5 6.8 — — — — — — — — — — 1.45 — Unit V µA µA V Ω pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 300 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 2 A IF = 2 A, VGS = 0 Note4 IF = 2 A, VGS = 0 diF/dt = 100 A/µs Rev.1.00 Nov 09, 2006 page 2 of 3 RJK6002DPD www.DataSheet4U.com Package Dimensions Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Previous Code  MASS[Typ.] 0.32g Unit: mm 1 ± 0.2 6.6 5.3 ± 0.2 2.3 0.5 ± 0.2 6.1 ± 0.2 10.4Max 0.1 ± 0.1 1Max 2.5Min 0.76 ± 0.2 0.76 0.5 ± 0.2 2.3 ± 0.2 2.3 Ordering Information Part Name RJK6002DPD-00-J2 Quantity 3000 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Nov 09, 2006 page 3 of 3 1 1.4 ± 0.2 www.DataSheet4U.com Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes war.


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