RJK6006DPD

Preliminary www.DataSheet4U.com Datasheet RJK6006DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW 10 s, duty cycle  1% Value at Tc = 25C STch = 25C, Tch  150C Limited by maximum safe operation area Symbol VDSS VGSS ID Note4 ID (pulse) IDR Note1 IDR (pulse) Note3 IAP Note3 EAR Pch Note 2 ch-c Tch Tstg Note1 Value 600 30 5 15 5 15 5 2 77.6 1.61 150 –55 to +150 Unit V V A A A A A mJ W C/W C C REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Page 1 of 6 RJK6006DPD Preliminary www.DataSheet4U.com Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge...