Silicon N Channel MOS FET High Speed Power Switching
Description
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RJK6025DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source ...
