RJK6029DJA

Preliminary www.DataSheet4U.com Datasheet RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D G 1. Source 2. Drain 3. Gate 32 1 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 Pch ch-a Tch Tstg Ratings 600 ±30 0.2 0.8 0.2 0.8 0.75 166.7 150 –55 to +150 Unit V V A A A A W C/W C C REJ03G1895-0100 Rev.1.00 Jun 18, 2010 Page 1 of 6 RJK6029DJA Preliminary www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RD...