RJL5014DPP

www.DataSheet4U.com RJL5014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1690-0300 Rev.3.00 Jun 13, 2008 Features Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 µs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum safe operation area Symbol VDSS VGSS Note4 ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 500 ±30 19 57 19 57 4 0.88 35 3.57 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1690-0300 Rev.3.00 Jun 13, 2008 Page 1 of 6 RJL5014DPP www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-dr...