Silicon N Channel MOS FET High Speed Power Switching
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RJL6013DPP
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1691-0200 Rev.2.00 Jun 13, 20...
Description
www.DataSheet4U.com
RJL6013DPP
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1691-0200 Rev.2.00 Jun 13, 2008
Features
Built-in fast recovery diode Low on-resistance Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 µs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum safe operation area Symbol VDSS VGSS Note4 ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg
Note1
Ratings 600 ±30 11 33 11 33 4 0.87 30 4.17 150 –55 to +150
Unit V V A A A A A mJ W °C/W °C °C
REJ03G1691-0200 Rev.2.00 Jun 13, 2008 Page 1 of 6
RJL6013DPP
www.DataSheet4U.com
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-dr...
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