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RJL6018DPK Dataheets PDF



Part Number RJL6018DPK
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet RJL6018DPK DatasheetRJL6018DPK Datasheet (PDF)

www.DataSheet4U.com RJL6018DPK Silicon N Channel MOS FET High Speed Power Switching Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1819-0100 Rev.1.00 Sep 11, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drai.

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www.DataSheet4U.com RJL6018DPK Silicon N Channel MOS FET High Speed Power Switching Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1819-0100 Rev.1.00 Sep 11, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 600 ±30 27 81 27 81 6 1.9 200 0.625 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1819-0100 Rev.1.00 Sep 11, 2009 Page 1 of 3 RJL6018DPK www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 1.5 — — — — — — — — — — — — — Typ — — — — 0.220 3830 369 43 42 53 157 87 98 17.5 41.6 1.00 180 Max — 10 ±0.1 4.0 0.265 — — — — — — — — — — 1.65 — Unit V μA μA V Ω pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 13.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 13.5 A VGS = 10 V RL = 22.2 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 27 A IF = 27 A, VGS = 0 Note4 IF = 27 A, VGS = 0 diF/dt = 100 A/μs REJ03G1819-0100 Rev.1.00 Sep 11, 2009 Page 2 of 3 RJL6018DPK www.DataSheet4U.com Package Dimensions Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 1.5 15.6 ± 0.3 4.8 ± 0.2 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part No. RJL6018DPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container REJ03G1819-0100 Rev.1.00 Sep 11, 2009 Page 3 of 3 0.3 www.DataSheet4U.com Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such info.


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