RJL6020DPK

www.DataSheet4U.com RJL6018DPK Silicon N Channel MOS FET High Speed Power Switching Features Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1819-0100 Rev.1.00 Sep 11, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 600 ±30 27 81 27 81 6 1.9 200 0.625 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1819-0100 Rev.1.00 Sep 11, 2009 Page 1 of 3 RJL6018DPK www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode rev...