EIC4450-15

www.DataSheet4U.com EIC4450-15 ISSUED: 03/30/2009 4.40-5.00GHz 15-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES 4.40– 5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 31 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC4450-15 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Gain at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Gain Flatness f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Power Added Efficiency at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 4500mA Drain Current at 1dB Compression f = 4.40-5.00GHz Caution! ESD sensitive device. MIN 41 9.5 TYP 42 10.5 MAX UNITS dBm dB ±0.7 31 4500 -43 -46 9000 -2.5 1.8 13000 -4.0 2.1 o dB % 5100 mA dBc mA V C/W Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 31 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 5.00GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 84 mA Note: 1. Tested with 30 Ohm gate resistor, forward and reverse gate current should nopt exceed 35mA and -5.1mA respectively. ...