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EMP210

Excelics Semiconductor

9.5 - 12 GHz Power Amplifier MMIC

www.DataSheet4U.com EMP210 UPDATED 05/08/2008 9.5 – 12 GHz Power Amplifier MMIC FEATURES • • • • 9.5 – 12.0 GHz Opera...


Excelics Semiconductor

EMP210

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www.DataSheet4U.com EMP210 UPDATED 05/08/2008 9.5 – 12 GHz Power Amplifier MMIC FEATURES 9.5 – 12.0 GHz Operating Frequency Range 24.0dBm Output Power at 1dB Compression 17.0 dB Typical Small Signal Gain -41dBc OIMD3 @Each Tone Pout 12.5dBm Dimension: 2250um X 1000um Thickness: 75um ± 13um APPLICATIONS Point-to-point and point-to-multipoint radio Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=180mA) SYMBOL F P1dB Gss OIMD3 Input RL Output RL Idss VDD Rth Tb PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power at 1dB Gain Compression Small Signal Gain Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 12.5dBm Vdd=7V, Idsq=60%±10%Idss Input Return Loss Output Return Loss Saturated Drain Current Drain Voltage Thermal Resistance (Au-Sn Eutectic Attach) Operating Base Plate Temperature -35 VDS =3V, VGS =0V 211 MIN 9.5 22.5 15.0 24.0 17.0 -41 -10 -8 264 7 34 +85 -38 -8 -5 317 8 o TYP MAX 12.0 UNITS GHz dBm dB dBc dB dB mA V C/W ºC MAXIMUM RATINGS AT 25°C1,2 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE 12V -8V Idss 24mA 20dBm 175°C -65/175°C 4.1W CONTINUOUS 8V -4 V 264 4mA @ 3dB compression 150°C -65/150°C 3.4W 1. Operating the device beyond any of the above rating may result in permanent d...




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