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EMP212

Excelics Semiconductor

9.50 - 12.0 GHz Power Amplifier MMIC

www.DataSheet4U.com EMP212 UPDATED 04/04/2008 9.50 – 12.0 GHz Power Amplifier MMIC FEATURES • • • • • • 9.5 – 12.0 GH...


Excelics Semiconductor

EMP212

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www.DataSheet4U.com EMP212 UPDATED 04/04/2008 9.50 – 12.0 GHz Power Amplifier MMIC FEATURES 9.5 – 12.0 GHz Operating Frequency 30.5dBm Output Power at 1dB Compression 18 dB Typical Power Gain 43dBc OIMD3 @ EACH TONE Pout 19dBm APPLICATIONS Point-to-point and point-to-multipoint radio Military Radar Systems Dimension: 2500um X 1600um Thickness: 85um ± 15um ELECTRICAL CHARACTERISTICS (Ta = 25 °C, Vdd*=7V, Idsq=800mA) SYMBOL F P1dB Gss OIMD3 Input RL Output RL Idss Vdd Rth Tb PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power at 1dB Gain Compression Small Signal Gain Vdd=5V Output 3 Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 19dBm Ids= 60%±10%Idss Input Return Loss Output Return Loss Saturated Drain Current Drain Voltage Thermal Resistance (Au-Sn Eutectic Attach) Operating Base Plate Temperature -35 Vds=3V, Vgs=0V 950 7 8.5 +85 rd MIN 9.5 29.5 15 TYP MAX 12.0 UNITS GHz dBm dB 30.5 18 -43 -10 -8 1250 -40 -7 -5 1500 8 dBc dB dB mA V o C/W ºC *Unless otherwise specified MAXIMUM RATINGS AT 25°C1,2 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE 12V -8V Idss 114mA 27dBm 175°C -65/175°C 12.4W CONTINUOUS 8V -4 V 1300mA 19mA @ 3dB compression 150°C -65/150°C 10.4W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias co...




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