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EMP214

Excelics Semiconductor

12.50- 15.50 GHz Power Amplifier MMIC

www.DataSheet4U.com EMP214 UPDATED 05/08/2008 12.50 – 15.50 GHz Power Amplifier MMIC FEATURES • • • • • • 12.5 – 15.5...


Excelics Semiconductor

EMP214

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www.DataSheet4U.com EMP214 UPDATED 05/08/2008 12.50 – 15.50 GHz Power Amplifier MMIC FEATURES 12.5 – 15.5 GHz Operating Frequency Range 29.5dBm Output Power at 1dB Compression 16.0 dB Typical Small Signal Gain -42dBc OIMD3 @Each Tone Pout 18.5dBm Dimension: 2650um X 2140um Thickness: 85um ± 15um APPLICATIONS Point-to-point and point-to-multipoint radio Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=750mA) SYMBOL PARAMETER/TEST CONDITIONS EMP214 F Operating Frequency Range EMP214H EMP214L P1dB Gss OIMD3 Input RL Output RL Idss VDD Rth Tb Output Power at 1dB Gain Compression Small Signal Gain Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 18.5dBm Ids=60%±10%Idss Input Return Loss Output Return Loss Saturate Drain Current VDS =3V, VGS =0V Power Supply Voltage Thermal Resistance (Au-Sn Eutectic Attach) Operating Base Plate Temperature -35 920 MIN 12.5 13.5 12.5 28.5 13.0 29.5 16.0 -42 -15 -15 1150 7 11 +85 o TYP MAX 15.5 15.5 14.5 UNITS GHz dBm dB -39 -10 -10 1380 dBc dB dB mA V C/W ºC MAXIMUM RATINGS AT 25°C1,2 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE 12 V -8 V Idss 114mA 27dBm 175°C -65/175°C 12.4W CONTINUOUS 8V -4 V 1300mA 19mA @ 3dB compression 150°C -65/150°C 10.4W 1. Operating the de...




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