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EMP215

Excelics Semiconductor

12.5 - 16.5 GHz Power Amplifier MMIC

www.DataSheet4U.com EMP215 UPDATED 05/08/2008 12.5 – 16.5 GHz Power Amplifier MMIC FEATURES • • • • • • 12.5 – 16.5 G...


Excelics Semiconductor

EMP215

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www.DataSheet4U.com EMP215 UPDATED 05/08/2008 12.5 – 16.5 GHz Power Amplifier MMIC FEATURES 12.5 – 16.5 GHz Operating Frequency Range 24.0dBm Output Power at 1dB Compression 17.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 14dBm Dimension: 2250um X 1000um Thickness: 75um ± 13um APPLICATIONS Point-to-point and point-to-multipoint radio Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=190mA) SYMBOL F P1dB Gss OIMD3 Input RL Output RL Idss VDD Rth Tb PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power at 1dB Gain Compression Small Signal Gain Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 14dBm Input Return Loss Output Return Loss Saturate Drain Current Power Supply Voltage Thermal Resistance (Au-Sn Eutectic Attach) Operating Base Plate Temperature -35 VDS =3V, VGS =0V 211 MIN 12.5 22.5 15.0 24.0 17.0 -40 -10 -10 264 7 34 +85 -37 -6 -6 317 8 o TYP MAX 16.5 UNITS GHz dBm dB dBc dB dB mA V C/W ºC ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation VALUE 8V -4 V Idss 4mA @ 3dB compression 150°C -65/150°C 3.4W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the f...




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