DatasheetsPDF.com

EMP216

Excelics Semiconductor

6 - 18 GHz 2 Watt Power Amplifier MMIC

www.DataSheet4U.com EMP216 6 - 18 GHz 2 Watt Power Amplifier MMIC FEATURES • • • • • • 6 - 18 GHz Operating Frequency R...


Excelics Semiconductor

EMP216

File Download Download EMP216 Datasheet


Description
www.DataSheet4U.com EMP216 6 - 18 GHz 2 Watt Power Amplifier MMIC FEATURES 6 - 18 GHz Operating Frequency Range 33 dBm Output Power at 1dB Compression 20.0 dB Typical Small Signal Gain Point-to-point and point-to-multipoint radio Military Radar Systems Test systems Dimension: 5330um X 3080um Thickness: 85um ± 15um APPLICATIONS Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C, 50 ohm, VDD=8V, IDQ=1250mA) SYMBOL F P1dB GSS G∆ ID1dB PAE OIMD3 Input RL Output RL IDSS RTH PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power at 1dB Gain Compression Small Signal Gain Small Signal Gain Flatness Supply current at 1dB Gain Compression Power Added Efficiency at 1dB Gain Compression Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 21.5dBm Input Return Loss 6GHz – 8GHz 8GHz – 18GHz Output Return Loss Saturated Drain Current VDD=3V, VGG=0V MIN 6 31 17 33 20 ±1.2 1400 20 -43.0 -8 -12 -15 2500 5.5 o TYP MAX 18 UNITS GHz dBm dB dB mA % dBc -5 -8 -10 dB dB dB mA C/W Thermal Resistance (Au-Sn Eutectic Attach) ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation VALUE 8V - 4V Idss 70 mA @ 3dB compression 175°C -65/175°C 22W 1. Operating the device beyond any of the above rating may result in permanent damage. Sp...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)