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B100NF04L Dataheets PDF



Part Number B100NF04L
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STB100NF04L
Datasheet B100NF04L DatasheetB100NF04L Datasheet (PDF)

www.DataSheet4U.com N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET TYPE STB100NF04L s s s s STB100NF04L VDSS 40 V RDS(on) <0.0042Ω ID 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics.

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www.DataSheet4U.com N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET TYPE STB100NF04L s s s s STB100NF04L VDSS 40 V RDS(on) <0.0042Ω ID 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS D2PAK TO-263 (Suffix “T4”) ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM(•) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 40 40 ± 16 100 70 400 300 2 3.6 1.4 -65 to 175 175 (1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, T j ≤ T JMAX (2) Starting T j = 25 oC, IAR = 50A, V DD= 30V Unit V V V A A A W W/°C V/ns J °C °C EAS (2) Tstg Tj (•) Pulse width limited by safe operating area. (*) Current Limited by package February 2002 . 1/9 www.DataSheet4U.com STB100NF04L THERMAL DATA Rthj-case Rthj-amb Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.5 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 16 V Min. 40 1 10 ±100 Typ. Max. Unit V µA µA nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 µA ID = 50 A ID = 50 A Min. 1 0.0036 0.0040 0.0042 0.0065 Typ. Max. Unit V Ω Ω DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 20 A Min. Typ. 50 6400 1300 190 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/9 www.DataSheet4U.com STB100NF04L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 50 A VDD = 20 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) VDD= 32V ID= 100A VGS= 4.5V Min. Typ. 37 270 72 20 28.5 90 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 20 V D = 50 A RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 3) ID = 100 A Vclamp = 32 V RG = 4.7Ω, VGS = 4.5 V (Inductive Load, Figure 5) Min. Typ. 90 80 85 125 160 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 100A VGS = 0 88 240 5.5 Test Conditions Min. Typ. Max. 100 400 1.3 Unit A A V ns nC A di/dt = 100A/µs ISD = 100 A VDD = 20 V Tj = 150°C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 www.DataSheet4U.com STB100NF04L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 www.DataSheet4U.com STB100NF04L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature. . . 5/9 www.DataSheet4U.com STB100NF04L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 www.DataSheet4U.com STB100NF04L D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0° 10 8.5 4.88 15 1.27 1.4 2.4 0.4 8° 0° 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.016 8° mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. .


EDI816256CA B100NF04L B1669


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