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B100NF04L Dataheets PDF



Part Number B100NF04L
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STB100NF04L
Datasheet B100NF04L DatasheetB100NF04L Datasheet (PDF)

www.DataSheet4U.com N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET TYPE STB100NF04L s s s s STB100NF04L VDSS 40 V RDS(on) <0.0042Ω ID 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics.

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www.DataSheet4U.com N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET TYPE STB100NF04L s s s s STB100NF04L VDSS 40 V RDS(on) <0.0042Ω ID 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS D2PAK TO-263 (Suffix “T4”) ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM(•) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 40 40 ± 16 100 70 400 300 2 3.6 1.4 -65 to 175 175 (1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, T j ≤ T JMAX (2) Starting T j = 25 oC, IAR = 50A, V DD= 30V Unit V V V A A A W W/°C V/ns J °C °C EAS (2) Tstg Tj (•) Pulse width limited by safe operating area. (*) Current Limited by package February 2002 . 1/9 www.DataSheet4U.com STB100NF04L THERMAL DATA Rthj-case Rthj-amb Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.5 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 16 V Min. 40 1 10 ±100 Typ. Max. Unit V µA µA nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 µA ID = 50 A ID = 50 A Min. 1 0.0036 0.0040 0.0042 0.0065 Typ. Max. Unit V Ω Ω DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 20 A Min. Typ. 50 6400 1300 190 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/9 www.DataSheet4U.com STB100NF04L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 50 A VDD = 20 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) VDD= 32V ID= 100A VGS= 4.5V Min. Typ.


EDI816256CA B100NF04L B1669


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