Document
Optoisolators (Photocouplers)
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CNC1H001
Optoisolator
Unit: mm
I Features
• Housed in a surface mount package alternative to mini-flat package of 1.27 mm pitch • Double molded package • 2.5 kV isolation voltage • UL approved (File No. E79920)
10.3±0.3 16 9
I Applications
• Suited for interface circuits requiring high density mounting of parts, especially hybrid ICs and programmable controllers • Signal transfer between circuits with different potentials and with impedances
1 1.27 0.4
8
4.4 7.0±0.3
2.0
0.1±0.1
0.15+0.10 -0.05
(1.3)
0.5±0.3
I Absolute Maximum Ratings Ta = 25°C
Parameter Input (light Reverse voltage (DC) Pulse forward current *1 Power dissipation *2 Output (photo Collector current transistor) Collector-emitter voltage Emitter-collector voltage Collector power dissipation *3 Isolation voltage, input to output *4 Operating ambient temperature Storage temperature Symbol VR IF IFP PD IC VCEO VECO PC VISO Topr Tstg Rating 6 50 1 75 50 80 7 120 2 500 −30 to +100 −55 to +125 Unit V mA A mW/ch mA V V mW/ch V[rms] °C °C
1 2 3 4 16 15 14
1, 3, 5, 7 : Anode 2, 4, 6, 8 : Cathode 9, 11, 13, 15 : Emitter 10, 12, 14, 16: Collector PCTFG116-001 Package
emitting diode) Forward current (DC)
Pin Connection
13 12
11 10
9
5
6
7
8
Top View
Note) *1: Pulse repetition rate = 100 pps. Pulse wide ≤ 100 µs *2: Above 25°C ambient temperature, derate dissipation at the rate of 0.75 mW/°C. *3: Above 25°C ambient temperature, derate dissipation at the rate of 1.2 mW/°C. *4: AC voltage (t = 1.0 min., RH < 60%)
Publication date: May 2002
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CNC1H001
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I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Input diode Forward voltage Reverse current Capacitance Output Collector-emitter dark current Symbol VF IR Ct ICEO VCEO VECO CC CTR CISO RISO tr tf VCE(sat) IF = 50 mA VR = 3 V VR = 0 V, f = 1 MHz VCE = 20 V IC = 100 µA IE = 10 µA VCE = 10 V, f = 1 MHz VCE = 5 V, IF = 5 mA f = 1 MHz VISO = 500 V VCC = 10 V, IC = 2 mA RL = 100 Ω IF = 20 mA, IC = 1 mA 1011 4 3 0.1 0.2 V 100 0.6 80 7 10 600 15 5 100 Conditions Min Typ 1.35 Max 1.5 10 Unit V µA pF nA V V pF % pF Ω µs
transistor Collector-emitter voltage Emitter-collector voltage Collector capacitance Coupled Current transfer ratio *1 Capacitance Resistance Rise time
*2
Fall time *3 Saturation voltage
Note) *1: CTR = IC / IF × 100% *2: Rise time is defined as the time required for the IC to rise from 10% to 90% of peak value. *3: Fall time is defined as the time required for the IC to decrease from 90% to 10% of peak value. Input and output are practiced by electricity. The device is designed be disregarded radiation.
PC , PD Ta
Collector power dissipation , power dissipation PC , PD (mW)
160 PC
IF V F
60 Ta = 25°C 102 VCC = 5 V Ta = 25°C
IC I F
50
Collector current IC (mA)
120
Forward current IF (mA)
10
40
80 PD
30
1
20
40
10−1
10
0 −20
0
0 20 40 60 80 100 120
0
0.4
0.8
1.2
1.6
2.0
2.4
10−2 10−1
1
10
102
Ambient temperature Ta (°C)
Forward voltage VF (V)
Forward current IF (mA)
2
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CNC1H001
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IC VCE
50 IF = 30 mA 25 mA
180
∆ I C Ta
104
ICEO Ta
VCE = 20 V
Collector-emitter dark current ICEO (nA)
Relative collector current ∆IC (%)
Collector current IC (mA)
40
20 mA
103
140
15 mA 30 10 mA 20
102
100
10
1
60
10
5 mA 2 mA 1 mA 0 2 4 6 8 10 12
10−1
0
20 −20
0
20
40
60
80
100
10−2 −40 −20
0
20
40
60
80
100
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
tr I C
102 VCC = 10 V Ta = 25°C RL = 1 kΩ 500 Ω 100 Ω 1
tf IC
102 VCC = 10 V Ta = 25°C RL = 1 k Ω 500 Ω 100 Ω 1
102
Frequency characteristics
Ta = 25°C
Relative power output P (dB)
10
10
10
Rise time tr (µs)
Fall time tf (µs)
1
10−1
Sig. in VCC V1 V1 50 Ω V2 RL 1 V2 90% 10%
10−1
Sig. in VCC V1 V1 50 Ω V2 RL 1 V2 90% 10%
10−1
tr
10
td
tf
102
10−2 10−1
tr
10
td
tf
102
10−2 10−1
10−2 1 10
IF = 5 mA
102
2 mA
103
Collector current IC (mA)
Collector current IC (mA)
Frequency f (kHz)
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Caution for Safety DANGER
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I Gallium arsenide material (GaAs) is used in this product.
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described i.