RB051M-2Y

www.DataSheet4U.com Schottky Barrier Diode RB051M-2Y Applications General rectification Dimensions(Unit : mm)  Land size figure(Unit : mm) 1.2 0.85 Features 1)Small power mold type. （PMDU） 2)Ultra Low VF 3)High reliability PMDU Construction Silicon epitaxial planer Structure Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Symbol Reverse voltage (repetitive) VRM Reverse voltage (DC) VR Average rectified forward current(*1) Io Forward current surge peak （60Hz・1cyc） IFSM Junction temperature Tj Storage temperature Tstg (*1)Mounting on alumina board. Tc=95 C　Max. Absolute maximum ratings (Ta=25C) Parameter Limits 20 20 3 30 125 -40 to +125 Unit V V A A C C Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.46 0.9 Unit V mA Conditions IF=3A VR=20V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A 3.05 RB051M-2Y 　 www.DataSheet4U.com Data Sheet Electrical characteristic curves 10 Ta=125 C REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150 C Ta=75 C Ta=25 C 0.1 Ta=-25 C 10000000 1000000 Ta=150 C Ta=125 C 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 100000 10000 1000 100 10 1 Ta=75 C 100 Ta=25 C 10 0.01 Ta=-25 C 0.001 0 100 200 300 400 500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-IR CHARA...