RB162M-40

3.5±0.05NotNeRewcDoemsimge Schottky barrier diode RB162M-40 Applications General rectification Dimensions(Unit : mm) Features 1)Small power mold type.(PMDU) 2)Low IR 3)High reliability Construction Silicon epitaxial planer 3.5±0.12r 0.85 3.05 Data Sheet Land size figure(Unit : mm) 1.2 PMDU Structure Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1.75±0.1nnsded fo 8.0±0.2 33..7711±±0.0.018 1.81±0.1 4.0±0.1 φ1.0±0.1 1.5MAX Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature IFSM Tj Tstg (*1)Mounted on epoxy board. (Tc=100°C MAX ) Limits 40 40 1 30 150 40 to 150 Electrical characteristics(Ta=25C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. VF - - 0.55 IR - - 100 Unit V V A A C C Unit Conditions V IF=1A μA VR=40V www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/3 2015.09 - Rev.B FORWARD CURRENT : IF(mA) REVERSE CURRENT : IR(A) CAPACITANCE BETWEEN TERMINALS : Ct(pF) for FORWARDnsdVOLTAGEe: VF(mV)d PEAKDoSURGEemsimgen FORWARD CURRENT : IFSM(A) RB162M-40 　 Data Sheet 1000 Ta=150C Ta=125C 100 10 Ta=-25C Ta=25C 10000 1000 100 10 1 0.1 Ta=75C 0.01 0.001 10 0 100 200 300 400 500 600 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR(A) 550 10 Ta=25℃ TIFa==12A5C 9 540 n=I...