RFU20TM5S

www.DataSheet4U.com Super Fast Recovery Diode RFU20TM5S Series Ultra Fast Recovery Dimensions(Unit : mm) Structure Applications General rectification (1) (2) (3) Features 1)Cathode common Single type.(TO-220) 2)Ultra high switching speed (1) (2) (3) Construction Silicon epitaxial planer Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave, Resistance load, Limits 530 530 20 100 150 -55to+150 Unit V V A A C C Tc=95C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR Reverse recovery time trr Thermal Resistance Rth(j-c) Conditions IF=20A VR=530V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. - Typ. 1.65 0.05 23 - Max. 2 10 30 1.8 Unit V μA ns C/W www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A RFU20TM5S 　 www.DataSheet4U.com Data Sheet Electrical characteristic curves 100 100000 Tj=150 C REVERSE CURRENT : IR(nA) 1000 f=1MHz Tj=25 C FORWARD CURRENT : IF(A) Tj=150 C 10 Tj=125 C 1000 Tj=125 C Tj=25 C 1 100 10 Tj=25 C 0.1 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 10000 100 1 10 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 600 0 5 10 15 20 25 ...