RP1E050RP

www.DataSheet4U.com 4V Drive Pch MOSFET RP1E050RP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) MPT6 Features 1) Low On-resistance. 2) High power package. 3) 4V drive. (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E050RP Taping TR 1000 ○  Inner circuit (6) (5) (4) ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 5 *1 Unit V V A A A A W C C (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg 20 1.6 20 2.0 150 55 to +150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 62.5 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.04 - Rev.A RP1E050RP  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transistor admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge ...