1.5V Drive Nch MOSFET
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1.5V Drive Nch MOSFET
RQ1C075UN
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSMT8...
Description
www.DataSheet4U.com
1.5V Drive Nch MOSFET
RQ1C075UN
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive).
(1) (2)
(3) (4)
Abbreviated symbol : XH
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RQ1C075UN Taping TR 3000
Inner circuit
(8) (7) (6) (5)
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a ceramic board.
Symbol VDSS VGSS
Limits 20 10 7.5
Unit V V A A A A W C C
(1) (2) (3) (4) (5) (6) (7) (8)
Source Source Source Gate Drain Drain Drain Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Continuous Pulsed Continuous Pulsed
ID IDP IS ISP PD Tch Tstg
*1
30 1 30 1.5 150 55 to +150
*1 *2
Thermal resistance Parameter Channel to Ambient
* Each terminal mounted on a ceramic board.
Symbol Rth (ch-a)*
Limits 83.3
Unit C / W
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1/5
2010.04 - Rev.A
RQ1C075UN
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse tr...
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