RRH100P03

www.DataSheet4U.com 4V Drive Pch MOSFET RRH100P03 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Package Type RRH100P03 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) ∗2 ∗1 (1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP Is Isp PD ∗1 ∗2 ∗1 Limits −30 ±20 ±10 ±40 −1.6 −40 2.0 150 −55 to +150 Unit V V A A A A W (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Pulsed Continuous Pulsed Tch Tstg °C °C Thermal resistance Parameter Channel to Ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-a)∗ Limits 62.5 Unit °C / W www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/5 2010.02 - Rev.A RRH100P03 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on ...