IRFP4568PBF

PD -96175 www.DataSheet4U.com IRFP4568PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ. max. ID (Silicon Limited) D 150V 4.8m: 5.9m: 171 G D S TO-247AC IRFP4568PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 171 121 684 517 3.45 ± 30 18.5 -55 to + 175 300 10lb in (1.1N m) 763 See Fig. 14, 15, 22a, 22b, Units A W W/°C V V/ns ™ e °C x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Ù d f mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient j Parameter Typ. ––– 0.24 ––– Max. 0.29 ––– 40 Units °C/W ij www....